2N5886 high current silicon npn power transistor n stmicroelectronics preferred salestype n high current capability applications n general purpose switching and amplifier n linear and switching industrial equipment description the 2N5886 is a silicon epitaxial-base npn power transistor mounted in jedec to-3 metal case. it is inteded for use in power linear amplifiers and switching applications. internal schematic diagram january 2000 1 2 to-3 absolute maximum ratings symbol parameter value unit v cbo collector-base voltage (i e = 0) 80 v v ceo collector-emitter voltage (i b = 0) 80 v v ebo emitter-base voltage (i c = 0) 5 v i c collector current 25 a i cm collector peak current 50 a i b base current 7.5 a p tot total dissipation at t c 25 o c 200 w t stg storage temperature -65 to 200 o c t j max. operating junction temperature 200 o c ? 1/4
thermal data r thj-case thermal resistance junction-case max 0.875 o c/w electrical characteristics (t case = 25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i cev collector cut-off current (v be = -1.5v) v ce = 80 v v ce = 80 v t c = 150 o c 1 10 ma ma i cbo collector cut-off current (i e = 0) v cb = 80 v 1 ma i ceo collector cut-off current (i b = 0) v ce = 40 v 2 ma i ebo emitter cut-off current (i c = 0) v eb = 5 v 1 ma v ceo(sus) * collector-emitter sustaining voltage (i b = 0) i c = 200 ma 80 v v ce(sat) * collector-emitter saturation voltage i c = 15 a i b = 1.5 a i c = 25 a i b = 6.25 a 1 4 v v v be(sat) * base-emitter saturation voltage i c = 25 a i b = 6.25 a 2.5 v v be * base-emitter voltage i c = 10 a v ce = 4 v 1.5 v h fe * dc current gain i c = 3 a v ce = 4 v i c = 10 a v ce = 4 v i c = 25 a v ce = 4 v 35 20 4 100 h fe small signal current gain i c = 3 a v ce = 4 v f = 1khz 20 f t transition frequency i c = 1 a v ce = 10 v f =1 mhz 4 mhz c cbo collector base capacitance i e = 0 v cb = 10 v f = 1mhz 500 pf t r t s t f resistive load rise time storage time fall time i c = 10 a v cc = 30 v i b1 = -i b2 = 1a 0.7 1 0.8 m s m s m s * pulsed: pulse duration = 300 m s, duty cycle 1.5 % 2N5886 2/4
dim. mm inch min. typ. max. min. typ. max. a 11.00 13.10 0.433 0.516 b 0.97 1.15 0.038 0.045 c 1.50 1.65 0.059 0.065 d 8.32 8.92 0.327 0.351 e 19.00 20.00 0.748 0.787 g 10.70 11.10 0.421 0.437 n 16.50 17.20 0.649 0.677 p 25.00 26.00 0.984 1.023 r 4.00 4.09 0.157 0.161 u 38.50 39.30 1.515 1.547 v 30.00 30.30 1.187 1.193 e b r c d a p g n v u o p003f to-3 mechanical data 2N5886 3/4
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsib ility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectroni cs. specifi cation mentio ned in this publication are subject to change without notice. this publication supersedes and replaces all in formation previou sly supplied. stmicroe lectron ics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectron ics. the st logo is a trademark of stmicroelectronics ? 2000 stmicroelectronics C pr inted in italy C all rights reserved stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malay sia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com 2N5886 4/4
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